Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method

Phyoe Sandar Win; Kathy Kyaw Min; Hla Myo Tun; Zaw Min Naing; Win Khaing Moe

doi:doi:10.11648/j.optics.20180701.15

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Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method

Phyoe Sandar Win, Kathy Kyaw Min, Hla Myo Tun, Zaw Min Naing, Win Khaing Moe

Published in Optics (Volume 7, Issue 1)

Received: 24 June 2018 Accepted: 5 July 2018 Published: 31 July 2018

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Abstract

III-Nitride semiconductors are especially capable for both electronics and optical devices. The capability of the III-Nitride semiconductors as light emitters to extent the electromagnetic spectrum from deep ultraviolet light, throughout the whole visible region, and into the infrared part of the spectrum, is a significant characteristic, making this material indispensable for the areas of light emitting devices. The near and far field characteristics of the GaN samples are studied by affecting the finite-difference time domain (FDTD) technique. The far region spreading characteristics at diverse incident angles are also conferred. In addition, the spreading field would be concentrated and the transmission efficiency could be enhanced by the phase shift caused by the dielectric substrate. The intended of optoelectronic devices fictitious from III-Nitride materials is supported by acquaintance of refractive index and absorption coefficient of these materials.

Published in	Optics (Volume 7, Issue 1)
DOI	10.11648/j.optics.20180701.15
Page(s)	32-37
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2018. Published by Science Publishing Group

Keywords

Photo Emission, Absorption Spectrum, GaN Sample, Finite Difference Time Domain Method

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APA Style

Phyoe Sandar Win, Kathy Kyaw Min, Hla Myo Tun, Zaw Min Naing, Win Khaing Moe. (2018). Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method. Optics, 7(1), 32-37. https://doi.org/10.11648/j.optics.20180701.15

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ACS Style

Phyoe Sandar Win; Kathy Kyaw Min; Hla Myo Tun; Zaw Min Naing; Win Khaing Moe. Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method. Optics. 2018, 7(1), 32-37. doi: 10.11648/j.optics.20180701.15

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AMA Style

Phyoe Sandar Win, Kathy Kyaw Min, Hla Myo Tun, Zaw Min Naing, Win Khaing Moe. Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method. Optics. 2018;7(1):32-37. doi: 10.11648/j.optics.20180701.15

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@article{10.11648/j.optics.20180701.15,
  author = {Phyoe Sandar Win and Kathy Kyaw Min and Hla Myo Tun and Zaw Min Naing and Win Khaing Moe},
  title = {Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method},
  journal = {Optics},
  volume = {7},
  number = {1},
  pages = {32-37},
  doi = {10.11648/j.optics.20180701.15},
  url = {https://doi.org/10.11648/j.optics.20180701.15},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.optics.20180701.15},
  abstract = {III-Nitride semiconductors are especially capable for both electronics and optical devices. The capability of the III-Nitride semiconductors as light emitters to extent the electromagnetic spectrum from deep ultraviolet light, throughout the whole visible region, and into the infrared part of the spectrum, is a significant characteristic, making this material indispensable for the areas of light emitting devices. The near and far field characteristics of the GaN samples are studied by affecting the finite-difference time domain (FDTD) technique. The far region spreading characteristics at diverse incident angles are also conferred. In addition, the spreading field would be concentrated and the transmission efficiency could be enhanced by the phase shift caused by the dielectric substrate. The intended of optoelectronic devices fictitious from III-Nitride materials is supported by acquaintance of refractive index and absorption coefficient of these materials.},
 year = {2018}
}

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TY  - JOUR
T1  - Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method
AU  - Phyoe Sandar Win
AU  - Kathy Kyaw Min
AU  - Hla Myo Tun
AU  - Zaw Min Naing
AU  - Win Khaing Moe
Y1  - 2018/07/31
PY  - 2018
N1  - https://doi.org/10.11648/j.optics.20180701.15
DO  - 10.11648/j.optics.20180701.15
T2  - Optics
JF  - Optics
JO  - Optics
SP  - 32
EP  - 37
PB  - Science Publishing Group
SN  - 2328-7810
UR  - https://doi.org/10.11648/j.optics.20180701.15
AB  - III-Nitride semiconductors are especially capable for both electronics and optical devices. The capability of the III-Nitride semiconductors as light emitters to extent the electromagnetic spectrum from deep ultraviolet light, throughout the whole visible region, and into the infrared part of the spectrum, is a significant characteristic, making this material indispensable for the areas of light emitting devices. The near and far field characteristics of the GaN samples are studied by affecting the finite-difference time domain (FDTD) technique. The far region spreading characteristics at diverse incident angles are also conferred. In addition, the spreading field would be concentrated and the transmission efficiency could be enhanced by the phase shift caused by the dielectric substrate. The intended of optoelectronic devices fictitious from III-Nitride materials is supported by acquaintance of refractive index and absorption coefficient of these materials.
VL  - 7
IS  - 1
ER  -

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Author Information

Phyoe Sandar Win

Department of Electronic Engineering, Mandalay Technological University, Mandalay, Myanmar
Kathy Kyaw Min

Department of Electronic Engineering, Mandalay Technological University, Mandalay, Myanmar
Hla Myo Tun

Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar
Zaw Min Naing

Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar
Win Khaing Moe

Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar

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Plain Text BibTeX RIS

APA Style

Phyoe Sandar Win, Kathy Kyaw Min, Hla Myo Tun, Zaw Min Naing, Win Khaing Moe. (2018). Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method. Optics, 7(1), 32-37. https://doi.org/10.11648/j.optics.20180701.15

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ACS Style

Phyoe Sandar Win; Kathy Kyaw Min; Hla Myo Tun; Zaw Min Naing; Win Khaing Moe. Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method. Optics. 2018, 7(1), 32-37. doi: 10.11648/j.optics.20180701.15

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AMA Style

Phyoe Sandar Win, Kathy Kyaw Min, Hla Myo Tun, Zaw Min Naing, Win Khaing Moe. Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method. Optics. 2018;7(1):32-37. doi: 10.11648/j.optics.20180701.15

Copy | Download

@article{10.11648/j.optics.20180701.15,
  author = {Phyoe Sandar Win and Kathy Kyaw Min and Hla Myo Tun and Zaw Min Naing and Win Khaing Moe},
  title = {Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method},
  journal = {Optics},
  volume = {7},
  number = {1},
  pages = {32-37},
  doi = {10.11648/j.optics.20180701.15},
  url = {https://doi.org/10.11648/j.optics.20180701.15},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.optics.20180701.15},
  abstract = {III-Nitride semiconductors are especially capable for both electronics and optical devices. The capability of the III-Nitride semiconductors as light emitters to extent the electromagnetic spectrum from deep ultraviolet light, throughout the whole visible region, and into the infrared part of the spectrum, is a significant characteristic, making this material indispensable for the areas of light emitting devices. The near and far field characteristics of the GaN samples are studied by affecting the finite-difference time domain (FDTD) technique. The far region spreading characteristics at diverse incident angles are also conferred. In addition, the spreading field would be concentrated and the transmission efficiency could be enhanced by the phase shift caused by the dielectric substrate. The intended of optoelectronic devices fictitious from III-Nitride materials is supported by acquaintance of refractive index and absorption coefficient of these materials.},
 year = {2018}
}

Copy | Download

TY  - JOUR
T1  - Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method
AU  - Phyoe Sandar Win
AU  - Kathy Kyaw Min
AU  - Hla Myo Tun
AU  - Zaw Min Naing
AU  - Win Khaing Moe
Y1  - 2018/07/31
PY  - 2018
N1  - https://doi.org/10.11648/j.optics.20180701.15
DO  - 10.11648/j.optics.20180701.15
T2  - Optics
JF  - Optics
JO  - Optics
SP  - 32
EP  - 37
PB  - Science Publishing Group
SN  - 2328-7810
UR  - https://doi.org/10.11648/j.optics.20180701.15
AB  - III-Nitride semiconductors are especially capable for both electronics and optical devices. The capability of the III-Nitride semiconductors as light emitters to extent the electromagnetic spectrum from deep ultraviolet light, throughout the whole visible region, and into the infrared part of the spectrum, is a significant characteristic, making this material indispensable for the areas of light emitting devices. The near and far field characteristics of the GaN samples are studied by affecting the finite-difference time domain (FDTD) technique. The far region spreading characteristics at diverse incident angles are also conferred. In addition, the spreading field would be concentrated and the transmission efficiency could be enhanced by the phase shift caused by the dielectric substrate. The intended of optoelectronic devices fictitious from III-Nitride materials is supported by acquaintance of refractive index and absorption coefficient of these materials.
VL  - 7
IS  - 1
ER  -

Copy | Download